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3dB带宽:>12 GHz
波长:1270纳米或1577纳米
工作温度:商业/工业温度范围
高坡度效率
小发散角
产品形态:裸片激光芯片或封装TO
适用于XGS-PON、接入和P2P网络应用
功率效率高
发散角小,便于包装
高可靠性
This is a 1270 nm single mode edge-emitting laser diode chip for uncooledapplications up to 10 Gb/s. This distributed-feedback (DFB) laser is based on ridge-waveguide structure with a multiple-quantum-well (MQW) design. This laser featureshigh optical power output, high SMSR, wide working temperature range and small farfield angles.
This is a 1310 nm single mode edge-emitting laser diode chip for uncooled applications up to 10 Gb/s. This distributed-feedback (DFB) laser is based on ridge-waveguide structure with a multiple-quantum-well (MQW) design. This laser features high optical power output, high SMSR, wide working temperature range and small far field angles.