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DD-BA-310-001

This is a 1310 nm single mode edge-emitting laser diode chip for uncooled applications up to 10 Gb/s. This distributed-feedback (DFB) laser is based on ridge-waveguide structure with a multiple-quantum-well (MQW) design. This laser features high optical power output, high SMSR, wide working temperature range and small far field angles.

Features

Low threshold current
Modulation rate up to 12.5 Gbps
Operating temperature range -40 to 85°C
Complied with Telcordia GR-468

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Key parameter
Absolute Maximum Ratings
Recommended Bonding condition
Dimensions and layout

Key parameter

Parameter	Symbol	Min	Type	Max	Unit	Test conditions
Threshold Current	I_th		8	12	mA	CW, @T=25°C
Threshold Current	I_th		20	25	mA	CW, @T=85°C
Slope Efficiency	SE	0.35	0.45		W/A	I_th+20 @25°C
Slope Efficiency	SE	0.25	0.3		W/A	I_th +20 @85°C
Optical output power	P_f	7.0	9		mW	I_th +20 @25°C
Optical output power	P_f	5	6		mW	I_th +20 @85°C
Forward Voltage	V_f		1.12	2	V	If= Ith +20
Series Resistance	Rs		8	12	Ω	Ith +20
Bias Current	lop			80	mA	CW
Reverse leakage current	I_r		0.1	1	mA	@ -2V
Wavelength	λ	1300	1310	1320	nm	@ Pf = 5 mW,-40～85°C
Wavelength/temperature coefficient	dλ/dT		0.09	0.12	nm/°C	-40～85°C
Side Mode Suppression Ratio	SMSR	35	45		dB	@ Pf = 5 mW,-40～85°C
Farfield（Vertical）	θ⊥	25	30	35	degree	@ Ith +20
Farfield（Horizontal）	θ//	20	25	30	degree	@ Ith +20
3dB Bandwidth		10	12		GHz	@ Ith +20

Absolute Maximum Ratings

Parameter	Symbol	Units	Min	Max
Storage Temperature	Ts	°C	-40	100
Operating Temperature	To	°C	-40	85
Forward power	PF	mW		40
Forward Current	IF	mA		150
Reverse Voltage	Vr	V		2
ESD level	ESD	V	500

Recommended Bonding condition

Process	Recommended Conditions
Die attachment (Die Bonding)	Solder	AuSn
	Temperature	<350
	Dwell time	<10 sec
	Pressure	30 g
	Ambient	N₂ flow
Wire Bonding	Au Wire
	Ball bond
	Diameter of wire	25 µm
	Weight	30 g
	Temperature	<200

Dimensions and layout

Length * Wide * Thickness：250±10 µm（L）* 225±10 µm（W）* 95±10 µm（H）

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