High-power CW DFB LD
This is a high-performance Continuous Wave (CW) laser diode chip designed for applications requiring low-noise stable laser source with a center wavelength around 1270/1290/1310/1330nm. These devices offer excellent beam quality, narrow spectral linewidth and high reliability. With a minimum output power of 70 mW at 75°C, this makes the device suitable for applications in optical fiber communication, spectroscopic analysis, and scientific research.
Light source for external modulation modules, spectroscopic analysis, scientific study.
Key parameter
Parameters | Symbol | Min | Type | Max | Unit | Test conditions |
Operating Temperature | Tc | 0 | - | 75 | °C | Carrier Temperature |
Threshold Current | Ith | 32 | 50 | mA | @ Tc=75°C, CW | |
Slope Efficiency | SE | 0.2 | 0.3 | - | W/A | @ Tc=75°C, CW |
Operating output power | Po | 70 | - | - | mW | @ If =320 mA，Tc=75°C, CW |
Operating Current | Iop | - | - | 320 | mA | @ Po =70mW，Tc=75°C, CW |
Operating Voltage | Vop | 1.1 | 1.8 | 2 | V | @ Po =70mW，Tc=75°C, CW |
Peak Wavelength | λp | λc -6.0nm | λc* | λc +7.5nm | Ω | Tc=0～75°C，@ Po=70mW, CW |
Wavelength Temperature Coefficient | dλ/dT | 0.08 | 0.09 | 0.12 | nm/°C | @ Po =70mW, CW |
Side Mode Suppression Ratio | SMSR | 40 | 45 | - | dB | @ Po =70mW, CW |
Farfield（Vertical） | θ⊥ | 20 | degree | @ Po =70mW, CW | ||
Farfield（Horizontal） | θ// | 24 | degree | @ Po =70mW, CW | ||
Relative intensity Noise | RIN | -145 | dB/HZ | @ Po =70mW, CW |
Absolute Maximum Ratings
Parameter | Symbol | Units | Min | Max |
Storage Temperature | Ts | °C | -40 | 85 |
Storage Humidity | Hst | % | - | 85 |
Operating Temperature | Tc | °C | 0 | 75 |
Bias Voltage | Vmax | V | -2 | +2 |
Driving Current | If | mA | - | 500 |
ESD level | ESD | V | 500 | - |
Dimensions and layout
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